摘要
建立精确的衬底电流模型是分析ＭＯＳＦＥＴ 器件及电路可靠性和进行ＭＯＳＦＥＴ 电路设计所必需的．在分析载流子输运的基础上建立了一个常规结构深亚微米ＭＯＳＦＥＴ 衬底电流的解析模型，模型公式简单．对模型进行了验证，研究了衬底掺杂浓度与栅氧化层厚度对拟合因子的影响，并分析了模型中拟合因子的物理意义．
For the reliability analysis and the design of MOSFET's circuits, it is necessary to model the substrate current accurately.This paper establishes a substrate current model of conventional deep\|submicrometer MOSFET's on the base of carrier transport. Non\|local transport is considered in the model. The model is simple and proved to fit the experiments very well. The influences of substrate doping concentration and gate oxide thickness to fitting factors are also presented. The physical meanings of the fitting factors are analyzed.
