摘要
在短沟道ＭＯＳＦＥＴ器件物理的基础上，导出了其衬底电流解析模型，并通过实验进行了模型参数提取。模型输出与短沟ＭＯＳＦＥＴ实测结果比较接近，可应用于ＶＬＳＩ／ＵＬＳＩ可靠性模拟与监测研究和亚微米ＣＭＯＳ电路设计。
An analytical substrate current model for short channel MOSFETs is derived based on its physics. Parameters of the model are extracted in an experiment. Result from the model is comparable with the measured data of short channel MOSFETs. It is applicable for reliability simulation and monitoring of VLSI/ULSI, and for design of submicron CMOS circuits.
出处
《微电子学》
CAS
CSCD
北大核心
1999年第3期174-177,共4页
Microelectronics
基金
国家自然科学基金
国防预研资助
