摘要
以电化学阳极氧化法制备的多孔硅(PS)为衬底,用脉冲激光沉积方法分别在200和300℃下制备了ZnS薄膜,得到ZnS/PS复合体系。利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、荧光分光光度计分别对ZnS/PS复合体系的晶体结构、形貌和光致发光(PL)特性进行了研究。XRD结果表明,制备的ZnS薄膜呈立方相晶体结构,沿β-ZnS(111)晶向择优取向生长,生长温度较高的样品的XRD衍射峰强度较大。SEM图像显示,生长温度较高的ZnS薄膜表面较致密平整。室温下的PL谱表明,沉积ZnS薄膜后,PS的发光峰发生蓝移。较高的生长温度下,ZnS的自激活发光强度较大,而PS的红光强度较低且峰位红移。根据三基色叠加的原理,ZnS的蓝绿光与PS的红光叠加在一起,ZnS/PS复合体系呈现出较强的白光发射,为固态白光发射器件的实现开辟了一条新的捷径。
ZnS films were prepared by pulsed laser deposition （PLD） at 200 ~C and 300 ~C on porous silicon （PS） substrates which were prepared by electrochemical anodization, and ZnS/ PS composites were obtained. XRD, SEM and fluorescence spectrophotometer were used to study the crystalline structure, morphology and photoluminescence （PL） properties of ZnS/PS composites respectively. XRD results show that, the prepared ZnS films have a crystalline structure of cubic phase, and they are grown in preferred orientation along fl-ZnS（lll）direction. The diffraction peak intensity is larger when the growth temperature is higher. SEM images show that, the surface of ZnS films grown at higher temperature is compact and smooth. The PL spectra at room temperature show that, a blue shift of the PS peak occurrs after ZnS films are deposited compared with as-prepared PS. The self-activated luminescence intensity of ZnS films is larger at higher growth temperature, while the red light intensity of PS is lower along with the redshift of the peak position. According to the principle of tricolor overlay, the blue-green emission of ZnS combined with the red emission of PS, ZnS/PS composite systems exhibit intense white light emission, which opens a new way for the realization of solid white light emission devices.
出处
《半导体光电》
CAS
CSCD
北大核心
2012年第3期375-378,共4页
Semiconductor Optoelectronics
基金
山东省自然科学基金资助项目(ZR2011AL020)
滨州学院科研基金资助项目(BZXYG1001)
