摘要
用脉冲激光沉积(PLD)的方法在多孔硅衬底上沉积了ZnS薄膜,并在室温下研究了ZnS/PS异质结的结构、光学和电学性质。X射线衍射仪(XRD)测量结果表明,制备的ZnS薄膜在28.5°附近有一较强的衍射峰,对应于β-ZnS(111)晶向,说明薄膜沿该方向高度择优取向生长。ZnS/PS复合体系的光致发光谱表明,ZnS的发光与PS的发光叠加在一起,在可见光区形成一个450～700 nm较宽的光致发光谱带,呈现较强的白光发射。对ZnS/PS异质结I-V特性曲线的测量结果表明,异质结呈现出与普通二极管相似的整流特性。在正向偏置下,电流密度较大,电压降较低;在反向偏置下,电流密度接近于零。异质结的理想因子的值为77。
ZnS films are deposited on porous silicon （PS） substrate by pulsed laser deposition （PLD）, and the structural, optical and electrical properties of ZnS/PS heterojunction are studied at room temperature. The measurement results of X-ray diffractorneter （XRD） show that the as prepared ZnS films have an intense diffraction peak at about 28. 5° corresponding to β-ZnS （111） orientation, which indicates that ZnS films have been grown in preferred orientation along this direction. The photoluminescence spectra （PL） of ZnS/PS composite show that the luminescence of ZnS combined with the luminescence of PS, a broad photoluminescence band （450-700 nm） is formed in the visible light region, exhibiting intensively white light emission. The measurement results of IV characteristic of ZnS/PS heterojunction indicate that the heterojunction exhibits the similar rectifying properties to the common diode. The current density is large and the voltage is small. On the contrary, the current density is nearly zero. The value of ideality factor of the heterojunction is 77.
出处
《光学与光电技术》
2010年第2期77-79,共3页
Optics & Optoelectronic Technology
基金
山东省自然科学基金项目(Y2002A09)
滨州学院"青年人才创新工程"科研基金(B2XYQNLG200703)资助项目
