摘要
应日本SEI公司的要求 ,通过大量的试验 ,研究出制备超细ITO粉末 (In2 O3—SnO2 )的独特工艺 ,使一次平均粒径达 0 2～ 0 3 μm ,比日本目前平均粒径 1～ 3 μm小约一个数量级。用它制备的透明电极ITO薄膜 ,相对密度 (R .D值 )高达 95 %～ 98%,高于日本市场要求的技术水平 .本工艺具有极好的再现性 ,大大地简化了工序 ,减少了玷污。为工业生产透明电极材料ITO超细粉末创造了条件。
Complied with the request of Japanese SEI company,an unique technology of preparing ultrafine ITO powders(In 2O 3—SnO 2) was investigated,the average size of powders are from 0 2 μm to 0 3 μm,much smaller than that are 1～1 3 μm in Japan now.They can prepare ITO thin film transparent electrod,Their relative densities are from 95% to 98%,higher than the request of Japanese market.This technology has very good reproducibility,greatly simplifies the working process,reduces the stain and creats favurable conditions for industrial producing ITO ultrafine powders of transparent electrode.
出处
《有色矿冶》
2000年第1期35-38,共4页
Non-Ferrous Mining and Metallurgy
关键词
透明电极
ITO
液晶显示
超细粉末
transparent electrode
ITO
liquid crystal display
ultrafine powders
