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LiBiO2掺杂的低温烧结PSZT压电陶瓷 被引量:4

Low-temperature Sintering of PSZT Ceramics Doped with LiBiO_2
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摘要 采用固相二步合成法,通过在预烧粉料中添加LiBiO2,制备出一种低温烧结的Pb0.95Sr0.05(Zr0.54Ti0.46)O3压电陶瓷材料。LiBiO2的添加具有降低烧结温度同时提高陶瓷性能的优点。实验结果表明:适量的LiBiO2掺杂,可形成过渡液相烧结,使烧结温度降低到950~1050℃,比未添加时的烧结温度低240~340℃。当w(LiBiO2)=1.0%,陶瓷达到最佳压电性能:压电应变常数d33=425 pC/N,平面机电耦合系数kp=57.62%,退极化温度Td=350℃,相对介电常数ε3T3/ε0=1543,介电损耗tanδ=0.0216,剩余极化强度Pr=35.51μC/cm2,体积密度ρ=7.45g/cm3。该材料可应用于低温共烧的叠层压电器件中。 By a two-step solid state synthesis method,low-temperature sintering of Pb0.95Sr0.05(Zr0.54Ti0.46)O3 piezoelectric ceramics were achieved with LiBiO2 addition.It was found that the LiBiO2 addition could not only promote the sinterability by forming a liquid phase during the sintering process,but also improve the performances of the resultant ceramics.The experimental results showed that,with addition of proper amount LiBiO2 as sintering aid,the sintering temperature of PSZT ceramics could be brought down to 1050 ℃,240-340 ℃ lower than that of PSZT ceramics without LiBiO2 addition.When doped with 1.0wt% LiBiO2 and sintered at 1050 ℃ for 4 h,the PSZT ceramics achieved optimum properties:d33=425 pC/N,kp=57.62%,Td=350 ℃,εT33/ε0=1543,tanδ=0.0216,ρ=7.45 g/cm3.The LiBiO2 doped PSZT ceramics show potential use in the laminated piezoelectric devices.
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2012年第3期737-741,746,共6页 Journal of Synthetic Crystals
基金 教育部新世纪优秀人才计划(NCET-09-0135) 武汉市学科带头人计划(200951830550) 湖北省人才项目(2007,2011)
关键词 PSZT压电陶瓷 LiBiO2掺杂 低温烧结 PSZT piezoceramics LiBiO2 doping low-temperature sintering
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