摘要
本文对ＬＰＣＶＤ半绝缘多晶硅（ＳＩＰＯＳ）薄膜工艺进行了研究，分析和讨论了工艺参数对薄膜淀积过程以及性能的影响。并较详细介绍了ＳＩＰＯＳ薄膜在高压功率器件领域的应用。
An investigation is made into the deposition process of LPCVD semi-insulating polysilicon(SIPOS )films,Effects of process parameters on the deposition of the film and its porformance are analyzed and discussed. Applicationsof SIPOS films to high voltage power devices are intreduced.
出处
《微电子学》
CAS
CSCD
1995年第1期45-52,共8页
Microelectronics
