摘要
介绍了雪崩光电二极管 (APD)和光电倍增管 (PMT)的工作原理、结构及其特性 ;论述了为提高它们的竞争力在改善性能方面的新进展 ;介绍了将半导体器件与真空电子器件结合在一起制成的新型光电探测器——真空雪崩光电二极管 (VAPD)和增强光电二极管 (IPD)。
The operating principles,structures and characteristics of avalanche photodiode(APD)and photomultiplier tuber(PMT)are presented.Some new advances in the improving performance,which are made in order to strengthen their capacity of the competition with other photodetectors,have been overviewed briefly.Finally,two novel photodetectors vacuum avalanche photodiode and intensified photodiode that combine the advantages of semiconductor devices and vacuum electronic devices are also introduced.
出处
《半导体技术》
CAS
CSCD
北大核心
2000年第3期5-8,12,共5页
Semiconductor Technology
