摘要
研究了基本工艺参数对磁控溅射制备无定形氮化碳（ａ－ＣＮｘ）薄膜沉积的影响．实验结果表明：Ｎ２流量的增加提高了膜的沉积速率，同时提高了膜中氮含量．溅射功率的提高增加了沉积速率．偏压对硬质膜的制备是一关键的工艺参数，它不仅使薄膜致密、表面光滑，而且还可以提高膜中的Ｎ含量．
The influence of basic processing parameters on the deposition of a-CN_x was studied.The results show that the increase of N flux enhances the deposition rate of the film as well asincreases its N content. While higher sputtering power leads to higher deposition rate. Further-more, the employment of bias will prove to be beneficial in the preparation of CN_x film in thatit not only facilitates the densification process and produces a smoother surface morphology, butalso increases the content of N in the film.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2000年第1期183-187,共5页
Journal of Inorganic Materials
基金
国家攀登计划!07-01
国家自然科学基金!59782006
中国科学院上海硅酸盐研究所所长择优基金!SZ97-4
