摘要
以Al(NO3)3.9H2O和ZnO粉体为原料,采用常压烧结方法制备了高致密度和高导电性的ZnO:Al(AZO)陶瓷靶材。研究了烧结温度对AZO靶材微观结构、相对密度和电性能的影响。当Al和Zn的摩尔比为3:100,烧结温度为1 400℃时,所制AZO靶材的致密度达96%,电阻率为2.5×10–2.cm。以烧结温度为1400℃的AZO陶瓷靶为靶材并通过直流磁控溅射在玻璃基片上制备出了高度c轴择优取向的AZO薄膜,其可见光透过率为90%,禁带宽度为3.63 eV,电阻率为1.7×10–3.cm。
ZnO：AI （AZO） ceramic targets with high conductivity and high relative density were prepared by normal pressure sintering with Al（NO3）3 · 9H2O and ZnO powder as raw materials. The effects of sintering temperature on the microstructure, relative density and electrical properties of the AZO targets were investigated. When the mole ratio of A 1 to Zn is 3：100 and the sintering temperature is 1 400 ~C, the relative density and resistivity of the prepared AZO target are 96% and 2.5×10-2 Ω.cm, respectively. AZO thin films with strong c-axis preference were grown on glass substrate by DC magnetron sputtering using the AZO target sintered at 1 400 ℃. And, its visible transmittance, forbidden band gap and resistivity are 90%, 3.63 eV and 1.7× 10-3 Ω cm, respectively.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2012年第3期31-34,共4页
Electronic Components And Materials
关键词
AZO靶材
烧结温度
直流磁控溅射
薄膜
AZO target
sintering temperature
DC magnetron sputtering
thin film
