摘要
In our experiments,the PL spectra of several In x Ga 1 x N alloy samples with In contents x=0.1,0.15 and 0.25 were measured as a function of temperature ranging from 10 K to 300 K.S-shaped temperature dependencies were observed in all InGaN samples and a sharp decrease in the full width at half maximum occurred with decreasing temperature in the moderate temperature region.It was found that both phenomena are relative to localization effects.In addition,the degree of localization effects in three samples was investigated using the band-tail model.Our findings are presented in this paper.
In our experiments, the PL spectra of several InxGa1-xN alloy samples with In contents x=0.1, 0.15 and 0.25 were measured as a function of temperature ranging from 10 K to 300 K. S-shaped temperature dependencies were observed in all InGaN sam- ples and a sharp decrease in the full width at half maximum occurred with decreasing temperature in the moderate temperature region. It was found that both phenomena are relative to localization effects. In addition, the degree of localization effects in three samples was investigated using the band-tail model. Our findings are presented in this paper.
基金
supported by the Special Funds for Major State Basic Research Project (Grant No. 2011CB301901)
the National Natural Science Foundation of China (Grant Nos. 60820106003,60990311 and 60906025)
the Natural Science Foundation of Jiangsu Province (Grant Nos.BK2008019 and BK2009255)
the Research Funds from NJU-Yangzhou Institute of Opto-electronics
