摘要
光电双基区晶体管在光电混合模式工作条件下具有光控“S”型负阻特性及其光控电流开关效应。测量了光照时IBE-VBE特性、Ith(光阈值)-RC特性等曲线。并利用电注入双基区晶体管的“S”型负阻产生机理解释了测得的结果。
In this paper,the photo controlled“S”negative resistance characteristics and the current switching effect have been found in the optical and electrical mixed operating mode on photo dual base transistor(PDUBAT).The I BE V BE and I th R C characteristics of PDUBAT under light have been measured.The measured results can be explained by the“S”negative resistance characteristic on electrical DUBAT device.
出处
《半导体技术》
CAS
CSCD
北大核心
2000年第1期19-21,30,共4页
Semiconductor Technology
基金
集成光电子学联合实验室开放课题资助
关键词
光电负阻器件
光控电流开关
光电晶体管
Photo negative resistance device Photo controlled current switching
