摘要
利用低压金属有机化合物汽相淀积方法，以液态ＣＣｌ４ 为掺杂源生长了高质量的碳掺杂ＧａＡｓ／ＡｌＧａＡｓ外延材料，研究了ＣＣｌ４ 流量、生长温度和Ⅴ／Ⅲ比等因素对外延材料中的碳掺杂水平的影响．采用电化学ＣＶ 方法、范德堡霍耳方法、低温光致发光谱和Ｘ射线双晶衍射回摆曲线测量等方法对碳掺杂外延材料的电学、光学特性进行了研究．实验制备了空穴浓度高达１．９×１０２０ｃｍ － ３的碳掺杂ＧａＡｓ 外延材料和低温光致发光谱半宽小于５ｎｍ 的高质量碳掺杂Ａｌ０．３Ｇａ０．７Ａｓ 外延层．在材料研究的基础上，我们以碳为Ｐ型掺杂剂生长了ＧａＡｓ／ＡｌＧａＡｓ／ＩｎＧａＡｓ应变量子阱９８０ｎｍ 大功率半导体激光器结构，并获得了室温连续工作１Ｗ 以上的光功率输出．
High quality carbon doped GaAs/AlGaAs materials are grown by low pressure\|Metalorganic Chemical Vapor Phase Deposition method,using liquid carbon tetrachloride as dopant.The dependency of doping level on growth parameters such as CCl\-4 molecular flow,growth temperature and Ⅴ/Ⅲ ratio is investigated.The electrical and optical properties are studied by electrochemistrical capacity voltage (CV),Hall effect,low temperature photoluminescence spectral and X\|ray double crystal diffraction methods.Highly carbon doped GaAs epitaxial layers with hole concentration up to 1.9×10 20 cm\+\{-3\} and high optical quality (PL FWHM less than 5nm) are obtained.GaAs/AlGaAs/InGaAs strained quantum well 980nm high power semiconductor laser structure are also grown,and the output light power of continuous wave laser is more than 1W at room temperature.
基金
国家自然科学基金!(No.69776033)
北京市自然科学基金!(No:4961001)
北京市科委高技术重点课题
