摘要
采用以碳纤维为碳源的固态源MBE技术，生长了不同厚度的重接碳GaAs以及具有不同表层厚度的δ碳掺杂GaAs，通过Nomarski干涉显微镜和原子力显微镜（AFM）对样品表面形貌的观察，分析了挨碳GaAs的生长过程和各种缺陷的产生，提出碳的掺入导致了GaAs材料的三维岛状生长，促进了各种缺陷的力生。提出了通过改善生长条件减少缺陷的途径。
Carbon uniformly doped GaAs of 1 ×1019cm-3 hole concentration with different thickness and δ-doped GaAs with different thickness GaAs following the carbon layer are grown by solid source molecular beam epitaxy using carbon fiber as dopant source. By observing the surface morphology of the layers using Nomarski micr0scope and atomic force microscope, the growth of carbon doped GaAs and the generation of defects are characterized. It is shown that carbon causes the island growth of GaAs and the generation of defects. The ways to reduce the defects by optimizing the growth condition are presented.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1997年第4期333-339,共7页
Research & Progress of SSE
关键词
碳掺杂
Δ掺杂
外延生长
砷化镓
Carbon Doped
δ-doped
Nomarski Microscope
Atomic Force Microscope
