摘要
设计了一种基于BiCMOS工艺、结构新颖的过温保护电路。对基准电流产生机理、芯片关断温度、芯片重新开启温度、温度滞回量和电路转换速度进行理论推导,给出了电路核心器件的参数设置。仿真结果显示,电路在127℃时关断芯片,116℃时重新开启芯片,温度滞回量为11℃,电路转换速度为26.2V/℃,性能稳定、可靠。
A novel thermal protection circuit was designed based on BiCMOS process.Theoretical analyses were made on the mechanism of reference current generation,the shutdown and restart temperatures of the circuit,the amount of temperature hysteresis,and the switching speed of the circuit.Setting of parameters of the core components in the circuit was described.Simulation results showed that the thermal protection circuit shut down the chip at 127 ℃,and re-start it at 116 ℃,and it had an amount of temperature hysteresis of 11 ℃ and a switching speed of 26.2 V/℃,indicating a stable and reliable performance.
出处
《微电子学》
CAS
CSCD
北大核心
2012年第1期58-62,共5页
Microelectronics
关键词
BICMOS
过温保护电路
基准电流
温度滞回
BiCMOS
Thermal protection circuit
Reference current
Temperature hysteresis
