摘要
通过直接测量激光照射前后电阻随温度的变化关系，研究了Ｇａ δ掺杂ＺｎＳｅ 超晶格的稳恒光电导效应．被研究的两块样品都显示了稳恒光电导效应，其中一块样品稳恒光电导的淬灭温度为１２０Ｋ，另一块样品的淬灭温度接近２９０Ｋ．描述了对这类超晶格稳恒光电导现象的测量结果，讨论了掺杂过程对光电导淬灭温度的影响．
Persistent photo\|conductivity effect in Ga δ\|doped ZnSe superlattices has been studied by measurement of resistance as a function of temperature. Between two samples measured, one exhibits persistent photo\|conductivity effect at the temperature up to 120K, while the other shows the effect up to 290K. The experimental results are presented and the effect of doping conduction on annealing temperature of persistent photo\|conductivity is discussed.
基金
国家自然科学基金
关键词
光电导
超晶格
硒化锌
镓
掺杂
Photo\|Conductivity, Superlattices, ZnSe
