摘要
用形变势理论讨论了单轴<001>和<110>及<111>张/压应力对锗导带各能谷(?能谷、?能谷及L能谷)能级的影响,采用包含自旋-轨道互作用及应力在内的六带k.p微扰法建立了单轴张/压应力作用下锗的价带结构模型,分析了锗价带带边能级随应力的变化情况,获得了锗导带底能谷能级分裂值、价带带边能级分裂值以及禁带宽度随应力的变化关系.量化数据可为单轴应力锗器件及电路的研究与设计提供参考.
The influence of uniaxial stress along the001,110and111directions to the conduction band（CB）energy valley（Г valley,△ valleys,and L valleys）of Germanium was investigated by deformation potential theory.The valence band（VB）structure model of Germanium in uniaxial stressed was established by using a six-band k.p model and coupled with deformation potential theory,and the variation of valence band edge energy level with stress was analyzed.The uniaxial stress induced band edge structure change,such as CB splitting energy,VB splitting energy,and band-gap were elaborated.The obtained quantitative results can provide reference for the calculation of other physical parameters of uniaxial stressed Germanium.
出处
《中国科学：物理学、力学、天文学》
CSCD
北大核心
2012年第1期15-21,共7页
Scientia Sinica Physica,Mechanica & Astronomica
基金
国家部委资助项目(编号:61398,51308040106,9140C090303110C0904)
陕西省自然科学基础研究计划(编号:2010JQ8008)资助项目
关键词
单轴应力锗
能带结构
k·p微扰法
uniaxial stressed Germanium
energy band structure
k.p perturbation method
