摘要
采用结合形变势理论的K.P微扰法建立了(001),(101)和(111)面弛豫Si衬底上生长的应变Si1-xGex(x≤0.5)的能带结构模型,获得了其导带带边能级、价带带边能级、导带劈裂能、价带劈裂能及禁带宽度随Ge组分(x)的函数变化关系,该量化数据对器件研究设计可提供有价值的参考.
There has been a lot of interest in the Si based strained technology lately, especially the modification of band structures which provides a theoretical basis for the design of the high-speed and high-performance devices and circuits. The band structure models of strained Si1-xGex on （001）,（101）,（111） relaxed Si are set up using K.P perturbation method coupled with deformation potential theory. Ge fraction （x） dependence of the conduction band （CB） and the valence band （VB） edge levels, CB and VB splitting energy and the indirect bandgap were obtained. The quantitative data from the models can supply valuable references to the design of devices.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2009年第11期7947-7951,共5页
Acta Physica Sinica
基金
国家部委项目(批准号:51308040203
9140A08060407DZ0103
6139801)资助的课题~~
