摘要
基于可调电流控制模式设计出一种低压、高电源抑制比的带隙基准电压源电路。采用电流控制模式和多反馈环路,提高电路的整体电源抑制比;通过电阻分压的方式,使电路达到低压,同时提供偏压,简化偏置电路。采用0.5μmCMOS N阱工艺,电路可在电源电压为1.5V时正常工作。使用Cadence Spectre进行仿真结果表明,低频时电源抑制比(PSRR)高达107dB。-10℃～125℃温度范围内,平均温度系数约7.17ppm/℃,功耗仅为0.525mW。此电路能有效地抑制制程变异。
A new bandgap voltage reference circuit with low voltage, high power supply rejection ratio （PSRR） based on a regulated current mode structure is presented. The proposed circuit utilizes a regulated current mode structure and some feedback loops to improve the overall PSRR. Using resistive subdivision reaches a low voltage and provides the bias voltage of transistors, simplified bias circuit. The circuit was designed with 0.5 μm complementary metal oxide semiconductor transistor （CMOS） N - well technology, which worked at 1.5V power voltage. Cadence Spectre simulation results show PSRR is 107dB at low frequencies, the temperature coefficient from - 10℃ to 125℃ temperature range is 7.17 ppm/℃and the power consumption is only 0. 525mW. This circuit shows robustness against process variation.
出处
《微处理机》
2011年第5期22-25,共4页
Microprocessors
基金
国家自然科学基金资助(61021061)
