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一种低成本高精度CMOS基准电压源设计 被引量：3

Design of a High Accuracy CMOS Voltage Reference with Low Cost
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摘要 利用电子迁移率和MOS管阈值电压对温度的变化呈反向趋势的原理,基于0.13μm标准CMOS工艺,设计实现了一款非带隙的基准源电路.Hspice仿真显示该基准能提供0.715V基准输出,并可以根据需要在0.4V～1V范围内进行调节.在-25℃～125℃范围内,温度系数为21.6ppm,在25℃时输出基准线性度为0.237%. In this paper a non-bandgap voltage reference was designed in a standard 0.13μm CMOS technology,based on element that electron mobility and threshold voltage have opposite temperature coefficients. The simulation results using by Hspice show that the output of proposed voltage reference is 0.715V and it can be adjusted from 0.4V to 1V. Within the temperature range from -25 ℃ to 125 ℃,a temperature coefficient of 21.6 ppm/ ℃ is achieved,and the line regulation at 25 ℃ is 0.237%/V.
作者 肖海鹏 马卓 张民选 张正旭
机构地区 国防科技大学计算机学院
出处 《微电子学与计算机》 CSCD 北大核心 2010年第5期121-124,共4页 Microelectronics & Computer
基金 国家自然科学基金项目(60873016) 国家"八六三"计划项目(2008AA01Z149)
关键词 CMOS基准电压源 阈值电压 电子迁移率 CMOS voltage reference threshold voltage electron mobility
分类号 TN4 [电子电信—微电子学与固体电子学]
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参考文献6

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二级参考文献12

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共引文献17

同被引文献17

  • 1张科,冯全源.一种带软启动电路的带隙基准电压源的实现[J].微电子学与计算机,2006,23(12):179-181. 被引量：7
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引证文献3

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微电子学与计算机
2010年 第5期

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