摘要
采用金属有机沉积(MOD)法制备了SrTiO3(STO)外延薄膜作为YBa2Cu3O7-δ涂层导体的缓冲层.以乙酸锶、钛酸丁酯为前驱物配制了Sr离子浓度为0.125 mol.L-1的SrTiO3前驱溶液.研究了950℃下不同烧结时间(90、120、150 min)对在双轴织构的Ni-W(200)金属基带上沉积STO外延薄膜晶体取向和微观形貌的影响.结果表明,在950℃氩氢混合气氛(Ar-4%H2)下适宜于STO薄膜外延生长的最佳烧结时间为120 min;STO缓冲层薄膜表面平整致密,无裂纹和孔洞,具有良好取向,可作为YBa2Cu3O7-δ涂层导体的缓冲层.
Epitaxial SrTiO3 thin films were prepared by metal organic deposition（MOD） method as buffer layer for YBa2Cu3O7-δ coated conductor.Strontium acetate（（C2H3O2）2Sr） and tetrabutyl titanate（C16H36O4Ti） were used as precursors to synthesize the precursor solution where the Sr concentration is 0.125 mol · L-1.The effect of sintering time（90、120、150 min at 950 ℃） on SrTiO3 epitaxial thin films crystal orientation and morphology prepared on the biaxially textured Ni-5at.%W（200） alloy substrates by MOD method was studied.The results showed that the best sintering time is 120 min for the SrTiO3 epitaxial growth under Ar-4%H2 atmosphere and at 950 ℃.The SrTiO3 buffer layer is smooth,dense,crack-free,pinhole-free and well-oriented.It can be a promising buffer layer for YBa2Cu3O7-δ coated conductor.
出处
《材料与冶金学报》
CAS
2011年第3期193-197,共5页
Journal of Materials and Metallurgy
基金
中央高校基本科研业务费专项资金资助(N100602010)
