摘要
本文从理论上分析了外腔半导体激光器的线宽压窄原理,用延时自外差法对外腔半导体激光器的线宽特性进行了测量研究,得到了线宽反比于激光器输出功率及外腔反馈率的实验结果.
In this paper, principles of linewidth reduction of external cavity semiconductor lasers are analyzed. Linewidth measurement is performed by the Delayed Self Heterodyne Method. It is obtained experimentally that laser linewidth is reversely proportional to laser output power and external cavity feedback level.
出处
《光学学报》
EI
CAS
CSCD
北大核心
1989年第9期775-779,共5页
Acta Optica Sinica
关键词
半导体激光器
线宽
外腔
semiconductor laser,linewidth
external cavity.
