摘要
在讨论半导体激光线宽压窄理论的基础上,利用闪耀光栅作为外部反馈元件,介绍了由中心波长为949.6nm、原始线宽为1.2THz的单管半导体激光器构成的反馈外腔,它能够很好的改善半导体激光器的性能。实验得到了中心波长稳定的、单纵模的高质量激光输出,边模抑制比大于30dB,线宽优于1.2MHz(Δλ<3.6×10-6nm)。实验证实了强反馈能够很好地改善外腔半导体激光器的动态特性。
Based on the discussion of linewidth-narrowing of the semiconductor laser, experimental results of external cavity semiconductor lair with narrow-linewidth are reported. With a blaze grating offering external feedback, strong coupled external cavity for a commercial ,semiconductor laser can improve the output characteristics of 949.6nm semiconductor laser. Its side mode suppression ratio is more than 30dB, and spectrum linewidth is narrower than 3.6×10^-6nm. The experiment shows that the strong feedback can improve the dynamical characteristics of an external cavity semiconductor laser.
出处
《光学技术》
CAS
CSCD
北大核心
2006年第6期869-870,878,共3页
Optical Technique
关键词
外腔半导体激光器
外腔反馈
强反馈
窄线宽
external-cavity semiconductor laser
external feedback
strong-feedback
narrow linewidth
