摘要
着重探讨了氧的低温异常扩散现象， 研究了氮在高温下扩散速率、扩散机理方面的进展，
The enhanced oxygen diffusion at lower temperatures is discussed.In addition,the diffusivity and mechanism of nitrogen is also previewed during annealing at high temperatures.Furthermore,the paper discusses some unsolven problems at present.
出处
《半导体技术》
CAS
CSCD
北大核心
1999年第6期1-6,共6页
Semiconductor Technology
关键词
扩散
杂质
硅
Diffusion Impurity Silicon
