摘要
本文根据雪崩电场及限制隧道电流要求出发,画出结构参数选择空间。估算和选择了InGaAs/InGaAsP/InPSAGM-APD器件结构,测量了光电流-电压的二级阶梯扭折曲线,给出和讨论了与实际测量的M_ρ比较吻合的经验公式。
In this paper, we plot the space of device structure parameters, in which InGaAs/InGaAsP/InP avalanche photodiodes with seperated absorption, grading and multiplication region is estimated and choosed according to the requirement of the avalanche field and the field limitting tunnelling current in this device. Two kinks like a step of I_p-V curve are measured and explained. The expcrential formula which is in agreement with pratical measurement result of M_p is griven and discussed.
出处
《光通信研究》
1989年第4期57-64,共8页
Study on Optical Communications
