摘要
采用辉光放电聚合技术,在不同工作压强条件下制备了掺硅的辉光放电聚合物(Si-GDP)薄膜.并采用傅里叶变换红外吸收光谱和X射线光电子能谱(XPS)对Si-GDP薄膜进行了表征,分析了压强变化对其内部结构及成分的影响.利用紫外—可见光谱对Si-GDP薄膜的光学带隙进行了分析.结果表明:Si-GDP薄膜中Si元素主要以Si—C,Si—H,Si—O,Si—CH3的键合形式存在;随着工作压强的增大,薄膜中Si—C键相对含量先减小后增加;从Si-GDP薄膜的XPS分析可以发现,C—C与CC含量相对比值随压强的增大而减小.光学带隙的宽度也随压强的增大先减小后增加.
The Si-doped glow discharge polymer（Si-GDP） films are deposited by glow discharge polymerization technology at different pressures.The structure and the composition of eath Si-doped glow discharge polymer film are characterized by the Fourier transform infrared spectroscopy and x-ray photoelectron.Using ultraviolet/visible spectroscopy,the optical band gap is analyzed.The results show that the Si element exists mainly in the form of Si—C,Si—H,Si—O,Si—CH3.The relative content of Si—C decreases and then increases with the increase of pressure.It can be found that the ratio between C—C and CC decreases with the increase of pressure.As the pressure increases,the optical band-gap decreases and then increases.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2011年第6期578-583,共6页
Acta Physica Sinica
