摘要
不同条件下,在单晶硅基片上沉积了含氮氟化类金刚石(FN-DLC)薄膜.原子力显微(AFM)形貌显示,掺N后,薄膜变得致密均匀.傅里叶变换吸收红外光谱(FTIR)表明,随着r(r=N2/[N2+CF4+CH4])的增大薄膜中C—H键的逐渐减少,CN和C≡N键含量逐渐增加.X射线光电子能谱(XPS)的C1s和N1s峰拟合结果发现,N掺入导致在薄膜中出现β-C3N4和a-CNx(x=1,2,3)成分.Roman散射谱的G峰向高频方向位移和峰值展宽等证明:随着r的增大,薄膜内sp2键态含量增加.
Nitrogen doped fluorinated diamond-like carbon （FN-DLC） films were deposited on p-type silicon wafers under different deposition conditions. Fourier transform infrared absorption spectrometry （FTIR） shows that the number of C-H bonds decreases with increasing r（ r = N2/[ N2 ＋ CF4 ＋ CH4 ] ）, but those of C =N, C≡N bonds increase gradually. Ganssian fit results of Cls and Nls in X-my photoelectron spectra （XPS） show that the β-C3N4 and a-CNx （x = 1,2,3） structures have formed in the films. The G band widening and the peak shift to the low wave-number in Raman spectra show that doping of N2 increases the fraction of sp^2 . Atomic force microscopy （AFM） reveals that the surface morphology of the films becomes smooth due to doping of nitrogen.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2007年第5期3004-3009,共6页
Acta Physica Sinica
关键词
氟化类金刚石膜
键结构
氮掺杂
fluorinated diamond-like carbon films, bond structure, nitrogen doping
