摘要
本文讨论了在不同充电参数条件下的恒栅流电晕充电的Ｓｉ 基ＳｉＯ２ 薄膜驻极体的空间电荷储存稳定性，并和栅控恒压电晕充电的结果进行了比较。利用电容－ 电压（ Ｃ－ Ｖ） 分析技术确定了空间电荷重心的漂移，并利用等温表面电位衰减测量，开路热刺激放电实验及Ｃ－ Ｖ 分析技术讨论了Ｓｉ 基ＳｉＯ２薄膜驻极体的空间电荷储存和输运特性。
In this paper,the charge storage stability for SiO 2 film electret on Si substrate by constant current corona charging with a grid at different charging parameters was discussed and it was compared to that by constant voltage corona charging with a grid.The shift of the mean charge depth in the sample was determined by Capacitance-Voltage (C-V) Analysis technique.The storage and transport of the space charges in the SiO 2 electret was studied by means of isothermal surface potential decay measurement,open circuit Thermally Stimulated Discharge (TSD) experiment and C-V analysis technique.
出处
《功能材料》
EI
CAS
CSCD
北大核心
1999年第6期646-648,共3页
Journal of Functional Materials
基金
国家自然科学基金!资助项目(59682003)
关键词
恒栅流电晕充电
二氧化硅
驻极体
电荷稳定性
corona charging with constant grid current
SiO 2
electret
charging stability
