摘要
本文用测量电阻变化的方法,研究了Al-Si(1%)金属化线条的电迁移失效.通过不同温度、电流密度应力的加速试验,得到了在所用应力范围内Al-Si(1%)合金电迁移的两个重要参量值:电流密度指数n 和电迁移激活能Q;并用扫描电镜对失效样品进行了观察和对实验结果作了初步的分析讨论.
The method of measuring metal stripresistance was used to investigate the elec-tromigration failure of Al-Si(1%)metalliza-tion.From the results of the acceleratedtesting at different temperatures and currentdensities,the two important parameters ofelectromigration,the current density exponentn and the activation energy Q,in the rangeof stresses used were determined.The failuresamples were investigated,and analyzed byusing SEM and the experimental results werepreliminarily discussed.
出处
《微电子学与计算机》
CSCD
北大核心
1990年第9期43-46,共4页
Microelectronics & Computer
基金
国家自然科学基金
关键词
金属化
电迁移
半导体器件
Metallizatiom
Electromigration
The Exponent of Current Density
The Activation Energy
