摘要
本文详细分析了硅集成电路的高温特性和高温失效模式,指出了CMOS集成电路的高温失效的主要模式是高温闭锁效应。解决这个问题的有效途径之一是研制介质隔离的CMOS IC,例如SOI CMOS集成电路。
The high temperature characteristics and failure modes of silicon integrated circuits are analyzed in detail in this paper. It is concluded that the major high temperature failure mode for CMOS IC is the effect of high temperature latchup, and one of the effective methods to solve this problem is to devel9p CMOS ICs with dielectric isolation, e. g. SOI CMOS ICs.
出处
《微电子学》
CAS
CSCD
1990年第4期65-70,共6页
Microelectronics
