摘要
目的基于低场输运模型,对4H-和6H-碳化硅电子霍耳迁移率和霍耳散射因子进行了理论计算。方法计算中采用了各向同性弛豫时间近似法,考虑了对其低场输运有着重要影响的声学波形变势散射、极化光学声子散射、谷间声子形变势散射、电离杂质散射以及中性杂质散射。结果得到了不同散射机制对于碳化硅电子霍耳迁移率的影响。结论该研究表明:中性杂质散射在低温高掺杂时是控制电子霍耳迁移率变化的主导因素,而在高温区,电子霍耳迁移率则主要受谷间声子散射等散射机制控制。
Aim Theoretical calculation of the electron Hall mobility and the Hall scattering factor in 4H-and 6H-SiC is performed.Methods The modified low-field transport model utilizing isotropic relaxation time approximation is used.The acoustic phonon deformation potential scattering,polar optical phonon scattering,intervalley phonon deformation scattering,ionized impurity scattering and neutral impurity scattering which have an important effect on low field transport in SiC are considered simultaneously.Results The impact of different scattering mechanisms on the electron Hall mobility is obtained.Conclusion The electron Hall mobility is mainly controlled by neutral impurity scattering at low temperature and high doping concentration.But the intervalley phonon deformation scattering is the main factor for high temperature.
出处
《西北大学学报（自然科学版）》
CAS
CSCD
北大核心
2011年第2期201-204,217,共5页
Journal of Northwest University（Natural Science Edition）
基金
国家重点实验室基金资助项目(ISN1003006)
中国博士后科学基金资助项目(20100481322)
