摘要
采用解析模型,对n型4H SiC电子霍耳迁移率和霍耳散射因子进行了理论计算.结果表明:低温区,掺杂浓度较高时,中性杂质散射对电子霍耳迁移率影响很大;高温区,电子霍耳迁移率则主要受谷间声子散射控制.此外,霍耳散射因子并不恒定为1,随着温度有一定的变化.研究还表明,施主浓度一定时,补偿率的变化对电子霍耳迁移率影响较大.
Theoretical calculations have been made on the electron Hall mobility and Hall scattering factor in the nitrogen-doped 4H-SiC based on an simplified analytical low field transport model considering five main scattering mechanisms including neutral impurity scattering. The results show that at lower temperatures, with increasing doping concentration, the impact of neutral impurity scattering becomes more significant. However the electron Hall mobility is controlled by intervalley phonon deformation potential scattering when the temperature is higher. In addition, the electron Hall mobility depends strongly on the compensation ratio when the donor concentration is kept constant. The Hall scattering factor is not always equal to one, but has a strong dependence on temperature. Comparisons with experimental data confirm the present calculation over a wide range of temperatures and doping concentrations.
出处
《西安电子科技大学学报》
EI
CAS
CSCD
北大核心
2004年第4期538-542,584,共6页
Journal of Xidian University
基金
教育部重点资助项目(02074)
国家部委科技预研基金资助项目(51408010601DZ1032)
