摘要
分析了半导体光放大器的偏振特性，研制成功一种具有低偏振相关增益的半导体光放大器，该器件采用张应变与压应变混合量子阱结构，在有源层解理面上镀制超低剩余反射率减反膜以消除谐振腔效应并抑制自身受激辐射，使入射光信号在经过有源层时获得单程增益，形成行波放大．
The relationship between the well width, well number and strained quantum of the SQW as well as the reflectivity of the AR film was studied. The results of the theoretical analysis and experimental investigation show that the P I curves of TE and TM modes for the QW, SQW and AR SQW wafers are significantly different from one another. An optimum balance has been achieved by adjusting the design parameters and the operation conditions. A polarization insensitive SOA with the polarization related gain ripple lower than 0.5dB in the whole range of the driven currents and the gain bandwidth was fabricated. The SOAs were designed to operate at two wavelengths of 1310nm and 1550nm respectively. A maximum gain of 22.5dB and gain bandwidth of 46nm have been achieved.
出处
《华中理工大学学报》
CSCD
北大核心
1999年第10期1-3,共3页
Journal of Huazhong University of Science and Technology
基金
国家高技术研究发展计划资助
