期刊文献+

N型4H-SiC中载流子密度和霍耳迁移率的模拟及研究

Modeling and Analysis of Temperature Dependence of the Carrier Concentration and Hall Mobility in N-type 4H-SiC
在线阅读 下载PDF
导出
摘要 采用流体动力学平衡方程在温度为30 K 到1000 K 范围内计算了霍耳迁移率,并用补偿模式研究了载流子密度与温度的关系.结果表明,电离杂质散射对霍耳迁移率与温度的关系有很大的影响.霍耳迁移率的低温值主要由电离杂质散射确定,而它的高温尾取决于声学声子,极化光学声子和谷间声子散射. In this paper, we present a Hall mobility calculation by hydrodynamic balance equations at temperature from 30 K to 1 000 K. We employ a compensation model to analyze the carrier concentration versus temperature data. The results show that the ionized impurity scattering has a considerable influence on the mobility vs temperature curve. The ionized impurity limits the low-temperature value of the mobility and the high-temperature tail is limited by acoustic, polar optical and intervalley optical lattice scattering. The calculated Hall mobility is in good agreement with the experiment data.
出处 《湘潭大学自然科学学报》 CAS CSCD 1999年第3期29-33,共5页 Natural Science Journal of Xiangtan University
关键词 霍耳迁移率 载流子密度 流体动力学 碳化硅器件 Hall mobility, carrier concentration, hydrodynamic balance equations
  • 相关文献

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部