摘要
为深入理解不同工艺参数对阴极电弧制备TiAlN薄膜性质的影响重要性,文中设计了L9(34)正交试验表,研究了基体负偏压、N2流量、阴极弧流对TiAlN沉积速率、表面粗糙度的影响,给出了工艺参数优化组合。结果表明:负偏压对TiAlN薄膜的沉积速率影响最大,其次是N2流量、弧流;对表面粗糙度的影响次序则为N2流量、弧流、负偏压。薄膜沉积速率随N2流量的升高而增大,随负偏压增加先增加后降低,随弧流的增大变化不明显。薄膜表面粗糙度随N2流量的升高逐渐减小,随负偏压的增加而增加,随弧流的增大而增大。
Orthogonal analysis method was used to notify the effect of deposition parameters including N2 flow rate,substrate negative bias voltage and arc current on the deposition rate and surface roughness of TiAlN thin films,which were deposited by a cathodic vacuum arc technique.The results indicates that the bias voltage plays the key role on the deposition rate of films,which is followed by the N2 flow rate and the arc current finally.However,the N2 flow rate are considered as the dominated parameter which influences the surface roughness of deposited films,then the arc current was the superior parameter,which is followed by the substrate bias in order.The relationships between the various parameters and the deposition rate,surface roughness of the deposited TiAlN films were discussed in terms of the target poisoning,transportation of micro–droplets and plasma,and dynamic balance between film deposition and re–sputtering effect as well.
出处
《中国表面工程》
EI
CAS
CSCD
北大核心
2011年第2期41-45,共5页
China Surface Engineering
基金
宁波市自然学基金项目资助(2009A610034)
浙江省重点科技攻关项目(2009C11123)
