期刊文献+

液相烧结SiC陶瓷性能的研究 被引量:3

Study on the Performance of Liquid Phase Sintered SiC Ceramics
在线阅读 下载PDF
导出
摘要 以Al2O3、Y2O3(质量比为2∶3)为烧结助剂,在氮气氛或氩气氛中、1 900~1 970℃3、0 MPa下热压制备SiC陶瓷。根据Archimedes原理测量烧结体的体积密度和显气孔率;采用XRD、SEM(EDS)及瞬态热导率测试仪分别对材料的物相、显微结构和热导率进行表征。研究了烧结温度、烧结气氛和烧结助剂含量对材料烧结性能和热导率的影响。结果表明,当烧结助剂质量分数为10%,获得SiC致密体(气孔率〈0.30%),热导率高达182.50 W/(m.K);随着烧结助剂的质量分数降至6%,材料的致密度和热导率皆明显下降;在氩气氛中SiC与Al2O3、Y2O3具有更好的润湿性。 The SiC ceramics has been prepared by the hot pressing of 30 MPa with Al2O3 and Y2O3(weight ratio of 2∶3) as sintering aids under the nitraogen or argon atmosphere at 1 900~1 970 ℃.The densification and the open porosity has been measured by Archimedes method.The phase,microstructure and the thermal conductivity have been characterized by using XRD,SEM(EDS) and the thermal conductivity tester respectively.The effects of the sintering temperature,sintering atmosphere and the thermal conductivity have been investigated.The results showed that the dense SiC ceramic with the porosity less than 0.30% and the thermal conductivity up to 182.50 W/(m·K) could be obtained when the amount of sintering aids was 10%.The densification and the thermal conductivity of the SiC cermic were decreased obviously with the amount of sintering aids decreased to 6%.In the argon atmosphere,the aids of Al2O3-Y2O3 had better wettability with SiC matrix.
出处 《压电与声光》 CSCD 北大核心 2011年第2期295-298,共4页 Piezoelectrics & Acoustooptics
基金 江苏省高校自然科学基金资助项目(03KLB.430047)
关键词 碳化硅(SiC) 液相烧结 热导率 烧结性能 SiC liquid sintering thermal conductivity sintering property
  • 相关文献

参考文献15

  • 1王斌,苏振华.行波管现状与发展[J].电子产品可靠性与环境试验,1998,16(2):45-49. 被引量:4
  • 2鲁燕萍.毫米波行波管用衰减瓷[J].真空电子技术,2004,17(1):49-52. 被引量:26
  • 3BILJANA M,DAVID K A,RON H. A1N-based lossy ceramics for high average power microwave devices..performance-property correlation[J]. J Eur Ceram Soc, 2003,23 : 2705-2709.
  • 4ERNES M,LEVIN H, MCMUEDIE F. Phase diagrams for ceramics[M]. American Ceramics Society, Colum- bus,1975.
  • 5崔梦,胡明,严如岳.SiC薄膜材料在MEMS中应用的研究进展[J].压电与声光,2004,26(6):482-484. 被引量:7
  • 6韩弼,徐静平,李艳萍,陈卫兵,邹晓,李春霞.新颖的氧化生长绝缘层的MISiC传感器特性研究[J].压电与声光,2006,28(2):176-178. 被引量:1
  • 7CALAME J P. Broadband microwave and W-band characterization of BeO-SiC and AIN-based lossydielectric composites for vacuum electronics[C], s. 1. : IEEE International, Vacuum Electro Conf, 2006 (A- pril) :36-37.
  • 8CAN A, HERRMANN M,MCLACHLAN D S. Densi- ficatlon of liquid phase sintered silicon carbide[J]. J Eur Ceram Soc, 2006,26(9) : 1707-1713.
  • 9GOMEZ E, ECHEBERRIA J. Liquid phase sintering of SiC with addition of Y203, A1203 and SiO2 [J]. J Eur Ceram Soc,2004,24(9):2895-2903.
  • 10SCITI D, BALBO A, BELLOSI A. Improvement of- fered by coprecipitation of sintering additives on ultra- fine SiC materials[J]. Adv Eng Mater, 2005, 7 (3) : 152-158.

二级参考文献39

  • 1赵世柯,尹文学,赵建东,康金生,肖东梅.氧化铍陶瓷材料的性能及应用[J].真空电子技术,2004,17(4):24-27. 被引量:11
  • 2王艳,于文生,吕英士.BeO-Al_2O_3陶瓷制备及性能研究[J].长春理工大学学报(自然科学版),2004,27(4):30-31. 被引量:1
  • 3司文捷.直接凝固注模成型Si_3N_4及SiC陶瓷──基本原理及工艺过程[J].硅酸盐学报,1996,24(1):32-37. 被引量:43
  • 4[3]Woignier T, Lespade P, Phalippou J, et al. J Non-Crys Solids[J].1 988,100:325.
  • 5[4]Okamura H, Barringer E A, Bowen H J. Mater Sci[J],1989,24(5):186 7.
  • 6[6]Wang X H,Li D,et al.Mater Lett[J],1996,28:203.
  • 7SUNDARARAJAN S,BHUSHAN B.Micro/nanotribological studies of polysilicon and SiC films for MEMS applications [J].Wear,1998,217(2):251-261.
  • 8MEHREGANY M, TONG L J, MATUS L G. Internal stress and elastic modulus measurements on micromachined 3C-SiC thin films[J]. Electron Devices, 1997, 44(1):74-79.
  • 9FLEISCHMAN A J, ROY S, ZORMAN C A, et al. Polycrystalline silicon carbide for surface micromachining MEMS '96[C]. The Ninth Annual International Workshop on, 1996,11-15: 234-238.
  • 10YAMAGUCHI Y, NAGASAWA H, SHOKI T, et al. Properties of heteroepitaxial 3C-SiC films grown by LPCVD solid-state sensors and actuators[C]. 1995 and Eurosensors IX. Transducers '95,1995(2):190-193.

共引文献65

同被引文献51

  • 1DEEPA M,KAR M,AGNIHOTRY S A.Electrodepositedtungsten oxide films:annealing effects on structure andelectrochromic performance.Thin Solid Films,2004,468(1-2):32-42.
  • 2REGRAGUI M,ADDOU M,OUTZOURHIT A,et al.Electrochromic effect in WO3 thin films prepared by spraypyrolysis.Solar Energy Materials&Solar Cells,2003,77(4):341-350.
  • 3KRINGS L H M,TALEN W.Wet chemical preparation andcharacterization of electrochromic WO3.Solar Energy Materialsand Solar Cells,1998,54(1-4):27-37.
  • 4LAI W H,SHIEH J,TEOH L G,et al.Effect of copolymer andadditive concentrations on the behaviors of mesoporoustungsten oxide.Journal of Alloys and Compounds,2005,396(1-2):295-301.
  • 5DABBOUS S,NASRALLAH T B,OUERFELLI J,et al.Studyof structural and optical properties of sprayed WO3 thin filmsusing enhanced characterization techniques along with theBoubaker Polynomials Expansion Scheme(BPES).Journal ofAlloys and Compounds,2009,487(1-2):286-292.
  • 6ZHANG J,WANG X L,XIA X H,et al.Enhancedelectrochromic performance of macroporous WO3 films formedby anodic oxidation of DC-sputtered tungsten layers.Electrochimica Acta,2010,55(23):6953-6958.
  • 7YIN H Y,SONG X C,ZHENG Y F,et al.Organic/inorganicnanocomposite films based on poly(3-methoxythiophene)andWO3.Materials Science and Engineering:B,2011,176(8):684-687.
  • 8CHAN Chih-Chieh,HSU Wen-Chia,CHANG Chung-Chieh,et al.Hydrogen incorporation in gasochromic coloration ofsol-gel WO3 thin films.Sensors and Actuators B:Chemical,2011,157(2):504-509.
  • 9陈忠明,谭寿洪,江东亮.高性能SiC—AlN复相陶瓷[J].无机材料学报,1997,12(5):763-767. 被引量:9
  • 10张小水,范子亮,阎玉卿,王利利,吴志敏.铼掺杂WO3材料的VOCs气敏特性[J].陶瓷学报,2008,29(3):267-271. 被引量:3

引证文献3

二级引证文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部