摘要
用P型锑化铟样品研究了变温霍尔效应中的副效应随温度的变化,发现副效应随温度非单调变化,并探讨了这一变化的原因,发现载流子迁移率随温度的变化直接影响各种副效应对温度的依赖关系.
Experiment on side effects of the Hall effect at different temperatures with P-type InSb is performed.It is found that the Hall voltage due to the side effect is a non-monotonic function of the temperature.The reason for this phenomenon is investigated,and the results show the temperature dependence of side effects is affected by the carrier mobility at different temperatures directly.
出处
《大学物理》
北大核心
2011年第3期48-51,65,共5页
College Physics
基金
教育部第二类特色专业建设项目(TS2072)资助
