摘要
提出了一种新型的低压带隙基准源,与传统的带隙基准不同,该电路引入了第三个电流,以消除双极型晶体管射基电压的温度非线性项,从而实现曲率补偿。采用0.18μm CMOS工艺进行设计验证,HSpice仿真结果表明,室温下的输出电压为623 mV,-55～+125℃范围内的温度系数为4.2 ppm/℃,1.0～2.1 V之间的电源调整率为0.9 mV/V。
A new sub-iV curvature-compensated CMOS bandgap reference （BGR） circuit is presented. Different from the conventional bandgap reference, a third current is introduced to eliminate the temperature nonlinearity of VEB of parasitic p-n-p bipolar junction transistor in CMOS process. The proposed circuit was designed and simulated in a standard 0.18um CMOS process. The results show that the output reference voltage at 623 mV has a temperature coefficient of 4. 2 ppm/C from 55℃ to ＋125℃, and a line regulation of 0.9 mV/V at 1-2. 1 V is achieved.
出处
《现代电子技术》
2011年第6期163-165,共3页
Modern Electronics Technique
基金
福建省重点科技项目资助(2006H0092)
关键词
带隙基准源
曲率补偿
低压
温度系数
bandgap voltage reference
curvature-compensation
low voltage
temperature coefficient
