摘要
为提高基准源的温度系数、电压调整率和电源抑制比,采用0.6μm标准CMOS工艺,设计一种采用电流镜复制技术的带隙基准源.仿真结果表明,电路具有结构简单、启动性能好、电压输出灵活稳定、温度范围宽等特点,能够满足模拟集成电路的要求.在3种工艺角模型,-50^+195℃温度变化范围内,其温度系数约为1.632×10-5℃-1,电源抑制比为-70 dB;而在4.5~6.5 V的电源范围内,其电压调整率为4.0×10-4.
To improve the temperature coefficient,adjusting rate of voltage and power supply rejection ratio of bandgap voltage reference,a novel circuit using the current-replication technique is designed in 0.6 μm CMOS process.The presented circuit is simple,and has good performance on startup.Furthermore,this circuit can work well in a wide temperature range and exhibits good flexibility and stability output of voltage.All these features are satisfied the requirement of analog integrated circuit.The simulation results show that the temperature coefficient is 1.632×10-5 ℃-1 with temperature changed from-50 ℃ to ＋195 ℃,the power supply rejection ratio can achieve-70 dB,and the adjusting rate of voltage is 4.0×10-4 with the supply voltage in the rage of 4.5~6.5 V.All these results are obtained at three different process corners（TT,FF,SS）.
出处
《华侨大学学报（自然科学版）》
CAS
北大核心
2010年第3期267-271,共5页
Journal of Huaqiao University(Natural Science)
基金
福建省自然科学基金资助项目(T0850005)
厦门市科技计划项目(3502Z20080010)
关键词
带隙基准
曲率补偿
平均温度系数
电源抑制比
bandgap reference
curvature-compensated
temperature coefficient
power supply rejection ratio
