摘要
通过激光脉冲沉积法,分别在C-sapphire和R-sapphire衬底上制备了单相二氧化钒(VO2)薄膜。用X射线衍射法表征了不同实验条件下制备的二氧化钒薄膜的结构性质,分析表明在600℃,10-2torr的氧气分压下,生长15 min可得到单相的二氧化钒(VO2)薄膜;重点研究了激光能量对薄膜电学性质的影响,实验结果表明激光能量在500～600 MJ时制备的二氧化钒薄膜具有最好的电学性质。
Single-phase VO2 thin films were synthesized via pulsed laser deposition method on C sapphire and R sapphire substrates. The structure properties of VO2 thin films under different experimental conditions were characterized by X-ray dif fraction. The results show that single-phase VO2 thin film can be prepared in 15 minutes, at 600℃, 10^-2 torr pressure of ox ygen. The laser energy impacts on electrical properties of VO2 thin films are discussed. Experimental results show that the VO2 thin films prepared at the laser energy of 500-600 MJ has the best electrical properties.
出处
《现代电子技术》
2011年第6期148-150,共3页
Modern Electronics Technique
基金
国家自然科学基金资助项目(60976020)
陕西省教育厅资助项目(112Z051)
