摘要
黄铜矿铜铟硒化合物CuInSe2及其与硫或嫁的合金CuIn(Se,S)2或CuInGa(Se,S)2,即所说的CIGS,已通过20%的实验室规模器件光电转换效率展示了其地面光伏应用的巨大潜力。为了减少初始资金成本,提高材料利用率,科研工作者们已经尝试了许多努力通过非真空制程沉积CIGS。这些制程包括电镀工艺,基于颗粒(浆或纳米颗粒)的制程和基于分子量级前趋体的制程。原则上,分子量级前趋体可以使组分元素达到充分混合,可以最大程度地实现组份在基板不同区域的均一分布。这对于一个复杂的涉及到五个主要元素的化合物系统尤为重要。从这个角度来看,分子前趋体的方法具有大面积均匀沉积铜铟镓硒的巨大潜力。这篇综述将着重讨论使用分子前趋体沉积铜铟镓硒制程的最新发展。
Chalcopyrite compound CuInSe2 and its alloy with S or Ga,i.e.,CuIn（Se,S）2 or Cu（In,Ga）Se2,which is commonly known as CIGS,have proved its great potential for terrestrial photovoltaic applications by demonstrating 20% efficiency for laboratory-scale devices.To reduce initial capital cost and increase material utilization,many efforts have been carried out to deposit CIGS using non-vacuum based processes.These processes include electrodeposition process,particulate-based processes（slurry or nanoparticle-based processes） and molecular-precursor solution processes.In principle,molecular-level precursors allow the maximum extent of inter-mixing of the ingredient elements and could yield the highest uniformity in terms of material distribution over different areas on the substrate.This is of particular importance for a complicated compound system that involves up to five main elements.From this point of view,molecular-precursor approaches possess great potential for large-area,uniform deposition of CIGS.This review focuses on recent developments on molecular-precursor based solution processes for CIGS deposition.
出处
《物理学进展》
CSCD
北大核心
2011年第1期60-69,共10页
Progress In Physics
基金
IBM T.J. Watson Research Center and Tokyo Ohka Kogyo(TOK)Co.,Ltd for providing funding and resources
关键词
光伏
CIGS
非真空沉积
分子前趋体
肼
photovoltaic
CIGS
non-vacuum based processes
molecular-precursor
hydrazine
