摘要
本文报道了ITO/SiO_2/n a SiC:H/i a Si:H/pμcSi:H/Mo无定形硅太阳电池的研制结果。分析了透明导电膜(TCO)和n型或者p型无定形硅膜之间存在的界面结势垒以及复合现象。文章强调指出克服这一界面复合现象是提高电池性能、特别是以金属为基体的n-i-p/Mo电池的FF、I_(sc)的重要手段。文章也分析了TCO膜的热电子发射对电池饱和电流的影响。按照半导体器件理论,SiO_2或者Si_3N_4介质膜可以改善界面复合和限制TCO的热电子发射。文章报道了用电子束蒸发反应沉积SiO_2膜作为naSiC:H胸膜的表面钝化层,减小电池饱和电流的实验结果。具有SiO_2钝化层的电池,I_o要比无钝化层的低两个数量级。界面复合的减少明显地提高了电池的短波响应。电池的最高效率为10.42％,FF达65.8%,比无钝化层的电池分别提高了15.5％和8.33％,这一结果表明我们在无定形硅太阳电池的研制技术上获得了新的进展。
In this paper, R&D results of amorphous silicon solar cells with ITO/SiO2/na-SiC: H/i a-Si:H/p μc Si:H/Mo is reported. The phenomenon of interface barrier and recombination betweem transparent conductive oxide and n or p amorphous silicon film are disscused. It is emphasized that minimizing the interface barrier and recombination is very important for improving efficiency of amorphous silicon solar cell especially n-i-p/ metal cells. The effect of thermal emission of TCO on cells performance is also analysed. In order to overcome the mentioned problems, the SiOx(x-2) is adopted as a passi-vasion layer between TCO and nSiC:H film which was deposited by vacuum electron beam evaporator. The experiment results show that the cells saturation current is obviously decreased comparing that of the cells without the passivasion layer. The highest efficiency of the cells obtained is 10.42%.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
1990年第3期230-237,共8页
Acta Energiae Solaris Sinica
