摘要
介绍了化学机械抛光的基本工作原理和目前发展情况。当前集成电路技术已进入０１８μｍ 时代，对集成度日益增高的电路芯片，金属互联线的层数也不断增加。每层金属互联线的金属条与其间隙之间的高度差都会造成硅圆晶片表面凸凹不平。化学机械抛光几乎是目前唯一的可以提供在整个硅圆晶片上全面平坦化的工艺技术。
The basic principal and development of CMP are introduced. IC technology has already entered the 0 18μm generation. As IC density increased, the metal wiring layers are increased also. The differ in height of surface topography on wafer is caused by metal wiring. A true global planarization can be achieved only by CMP right now.
