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不同频率下介电材料偏压温度特性测试 被引量:2

Measuring of Bias and Temperature Characteristics of Dielectric Materials under Different Frequency
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摘要 在分析加偏方法、所用元件、线路残量、加偏电压与相关元件功率的关系与保护方式的基础上,构置了可用于偏压下介电材料的电容量 Cx 及损耗 tan δ不同频率下温度特性测试装置。实验证明,该套装置可对样品不同偏压下的电容量和损耗的温度特性直接显示,并具有偏压范围宽,对不同偏压下介质材料可以在 0.5 Hz~1 M Hz 的频率范围进行温度特性测试。 In this paper,the circuit of measuring bias characteristic of the dielectric materials used electrical elements in the circuit,the inductance and resistance of the line between the clips of the sample and LCR meter,the conductance of the clips,the relation between bias and power of relative elements and the LCR meter is protected were analyzed according to the analysis above.A mesauring equipment of bias characterisic is proposed for measuring the dielectric constant and its tan of dielectric materials.The capacitance and tan of the samples directly display under different bias with the equipment,and it is wider bias(0~500 V)range than general meter.The temperature charactristic of the dielectric material can be measured in the range from 0.5 Hz to 1 MHz under different bias.
出处 《压电与声光》 CAS CSCD 北大核心 1999年第4期318-322,共5页 Piezoelectrics & Acoustooptics
基金 国家"八六三"计划资助项目
关键词 介电材料 偏压特性 温频特性 测试 dielectric materials bias characteristic temperature and frequency characteristic measurment
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参考文献2

  • 1李能贵,电子材料及元器件测试技术,1987年
  • 2李继凡,精密电气测量,1984年

同被引文献9

  • 1鲁效明.常规四探针法和双位四探针法测量半导体薄片电阻率的比较与探讨[J].计量技术,1994(4):24-26. 被引量:3
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  • 6Stevens K S,Johnson N M.Intrinsics stress in hydrogenated amorphous silicin deposited with a remote hydrogen plasma[J].J.Appl.Phous.,71,2638-2631,1986.
  • 7M J Loboda,Springer Proceeding in Physics[C].71(1992),271.
  • 8Tissot J L,Rothan F,Vedel C.LETI/LIR's amorphous silicon uncooled IRFPADDDDE Development[C].Proc.SPIE,3379,139-144,1998.
  • 9吴金涛,凌志远.Sm掺杂PMN–PT弛豫铁电陶瓷的大信号径向谐振响应[J].硅酸盐学报,2023,51(6):1484-1489. 被引量:3

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