摘要
Due to its extraordinary properties, such as wide band gap, high electronic drift velocity, high electric breakdown field,and excellent chemical and thermal stability, silicon carbide has been of technical importance for high temperature, high frequency, and high power electronic devices and is attracting more attention. In device processing ion implantation is an important technological procedure. But the
Due to its extraordinary properties, such as wide band gap, high electronic drift velocity, high electric breakdown field,and excellent chemical and thermal stability, silicon carbide has been of technical importance for high temperature, high frequency, and high power electronic devices and is attracting more attention.
