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离子源辅助中频磁控溅射法在活塞环表面沉积CrN涂层 被引量：4

Chromium nitride coatings prepared by filament ion source-assisted medium-frequency magnetron sputtering
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摘要 用热丝弧光放电离子源辅助的中频磁控溅射装置在单晶硅和渗氮钢质活塞环上沉积CrN涂层,并用X射线衍射、原子力显微镜和电子显微镜测量涂层的微结构,用显微硬度计和球盘式摩擦磨损仪测量涂层的硬度和摩擦性能。与常规的中频磁控溅射法相比,采用离子源辅助磁控溅射法制备CrN涂层的沉积速率提高30%以上,达到4.0μm/h。在靶基距为90 mm,氮气分压比为0.14的优化条件下,沉积在活塞环上的CrN涂层结构为CrN(200)取向,涂层厚度达到25μm,硬度高达17.85 GPa,平均摩擦因数为0.48。 CrN coatings were prepared on Si and cemented carbide substrates by a home-made medium-frequency magnetron sputtering system which is equipped with a thermal filament ion source.The structure and mechanical properties of the coatings were studied by X-ray diffraction,electron microscopy and micro-indenter and pin-on-disc wear tester.A high deposition rate of 4.0 mm/h has reached with the use of the ion source assistance in the medium-frequency magnetron sputter system.Under optimized conditions,CrN coatings have deposited on piston rings,with a thickness of 25 mm and hardness of 17.85 GPa.
作者 闫少健 王玲玲 林宝珠 刘传胜 田灿鑫 王泽松 付德君
机构地区 武汉大学加速器实验室
出处 《粉末冶金材料科学与工程》 EI 2010年第6期549-553,共5页 Materials Science and Engineering of Powder Metallurgy
基金 国家科技重大专项(2009ZX04012-032)
关键词 中频磁控溅射 CRN 离子源 显微硬度 摩擦因数 medium-frequency magnetron sputtering CrN ion source microhardness friction coefficient
分类号 TG174.44 [金属学及工艺—金属表面处理]
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参考文献13

  • 1OLAYA J J, RODIL S E, MUHL S, et al. Comparative study of chromium nitride coatings deposited by unbalanced and balanced magnetron sputtering [J]. Thin Solid Films, 2005, 474(1/2): 119-126.
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同被引文献51

  • 1王静,张广安,王立平.金属复合对CrN薄膜的结构及摩擦磨损性能的影响[J].润滑与密封,2008,33(5):30-32. 被引量：9
  • 2代明江,林松盛,侯惠君,朱霞高,李洪武,况敏.用离子源技术制备类金刚石膜研究[J].中国表面工程,2005,18(5):16-19. 被引量：14
  • 3An Z H, Men C L, Xu Z K et al. Electrical properties of AlN thin films prepared by ion beam enhanced deposition [J]. Surface & Coatings Technology, 2005, 196:130-134.
  • 4Jaequot A, Lenoir B, Dauscher A. Optical and thermal characterization of AIN thin films deposited by pulsed laser deposition [J]. Applied Surface Science. 2002, 186:507-512.
  • 5Zollner, Stefan, Konkar et M. Dielectric function of AlN grown on Si (111) by MBE [J]. Materials Research Society Symposium-Proceedings. 1999, 572: 231-236.
  • 6Dobrynin A V. Thermoelastie strain and plastic yielding in aluminum nitride on sapphire[J]. Journal of Applied Physics, 1999, 85(3):1876-1882.
  • 7Werbowy Aloksander, Olszyna Andrzej, Zdunek Krzysztef et al. Peculiarities of thin film deposition by means of reactive impulse plasma assisted chemical vapor deposition (RIPACVD) method [J]. Thin Solid Fihns. 2004, 459(1-2): 160-164.
  • 8Yang C M, Uehara K, Kim S K et al. Highly c-axisoriented AlN film using MOCVD for 5GHz-hand FBAR filter[J]. Proceedings of the IEEE Uhrasonics Symposium.2003, 1:170-173.
  • 9Jacquot A, Lenoir B, Dauscher A et al. Optical and thermal characterization of A1N thin films deposited by pulsed laser deposition[J]. Applied Surface Science. 2002, 186 (1-4):507-512.
  • 10Vergara L, Clement M, Iborra E et al. Influence of oxygen and argon on the crystal quality and piezoelectric response of A1N sputtered thin films [J]. Diamond and Related Materials. 2004, 13(4-8):839-842.

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粉末冶金材料科学与工程
2010年 第6期

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