摘要
采用PECVD工艺在普通玻璃衬底上制备非晶硅薄膜,用波长为532nm的倍频Nd:YAG激光对非晶硅薄膜的表层进行了晶化。研究了激光能量密度对非晶硅薄膜表面结晶度以及晶粒大小的影响,并对晶化后的非晶硅表面形貌进行了表征。研究结果表明:该非晶硅薄膜晶化的阈值能量密度为800 mJ/cm^2,当激光能量密度大于该值时,晶化效果反而变差。同时经过拉曼光谱表征,经由高斯拟合和数值计算得出薄膜结晶度在45%～60%之间,平均晶粒尺寸在30～50nm。
In this paper,the amorphous silicon（a-si：H） was obtained on glass using plasma enhanced chemical vapor deposition（PECVD） method.The crystallization transition from a - si to nc -si was performed using frequency -doubled Nd：YAG laser with a flat -top beam.The crystalline and microstructure of the laser interference crystallized samples were investigated by X - ray diffraction,Raman spectra and Atomic Force Microscopy（AFM）.The best laser energy influence is 800mJ/cm and the mean crystal grain size is 30～50nm.
出处
《功能材料与器件学报》
CAS
CSCD
北大核心
2010年第6期565-569,共5页
Journal of Functional Materials and Devices
基金
上海市重点学科资助(编号:S30107)
