摘要
设计了0.13um标准CMOS工艺下相变存储器(PCM)中选通二极管的二维工艺模型,利用数值模拟方法进行仿真,对模型中关键参数的优化,得到了一个性能优化的P+/N-/N+结构的选通二极管,此选通二极管可在1.47V电压下达到1 mA的RESET电流,并且反向击穿电压可以达到11V。文章最后还讨论了工艺尺寸从0.13um到22nm等比例缩小下选通二极管的性能,仿真结果表明这些选通二极管均能在较低电压下提供满足RESET操作的电流。
A 2D technology model of switch diode in phase change memory is designed according to the 0. 13um CMOS technology.The numerical simulation is used.After optimizing the critical parameters,a diode which structure is P ＋/N -/N ＋,can supply the 1mA RESET current at lower voltage and is able to afford 11V reverse voltage is developed.At the end of this paper,we discuss the performance of switch diode that is scaled down from 0.13um to 22nm.The simulation results show these diodes are satisfied with the RESET current at lower voltage.
出处
《功能材料与器件学报》
CAS
CSCD
北大核心
2010年第6期536-541,共6页
Journal of Functional Materials and Devices
基金
国家集成电路重大专项(2009ZX02023-3)
国家重点基础研究发展计划(2007CB935400
2010CB934300
2006CB302700)
国家863计划(2008AA031402)
上海市科委(08DZ2200700
08JC1421700
09QH1402600)
中科院"院长特别奖获得者科研启动专项资金"(083YQA1001)
关键词
相变存储器
选通二极管
数值模拟
phase change memory
switch diode
numerical simulation
