摘要
A flat and compact Al2O3 film of 20urn in thickness was prepared on the substrate of Si wafer by magnetic controlled sputtering Al reaction with O2 in Ar. A small amount of MoO3 was va- porized in vacuum and deposited onto a slot in a covering film on the surface of A12O3 film. The samples were heated in dry or wet N2, O2 and air respectively, characterized by TRSRF, AES, XPS, XRD and SEM to study the surface diffusion of MoO3 on the A12O3 film. The results show that MoO3 can diffuse on the surface of Al2O3 film by heating the samples at 573K or 673K. The diffusion rate increases with the heating temperature. moisture can accelerate the diffusion rate of MoO3 on the surface of Al2O3.
A flat and compact Al2_O3 film of 20urn in thickness was prepared on the substrate of Si wafer by magnetic controlled sputtering Al reaction with O2 in Ar. A small amount of MoO3 was va- porized in vacuum and deposited onto a slot in a covering film on the surface of A12O3 film. The samples were heated in dry or wet N2, O2 and air respectively, characterized by TRSRF, AES, XPS, XRD and SEM to study the surface diffusion of MoO3 on the A12O3 film. The results show that MoO_3 can diffuse on the surface of Al_2O_3 film by heating the samples at 573K or 673K. The diffusion rate increases with the heating temperature. moisture can accelerate the diffusion rate of MoO_3 on the surface of Al_2O_3.
出处
《物理化学学报》
SCIE
CAS
CSCD
北大核心
1999年第8期684-687,共4页
Acta Physico-Chimica Sinica
基金
国家自然科学基金!(29733080)
攀登计划基金资助项目
