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真空和射频溅射对ITO膜性能的影响 被引量:6

The Properties of ITO Films Effected by DC or RF Magnetron Sputtering
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摘要 为进一步探求磁控溅射的机理,本文通过用直流和射频两种磁控溅射沉积ITO(IndiumTinOxide)膜的方法,由沉积后的ITO膜的特性来揭示不同溅射方法的机制。 Abstract In order to further pursue the innate characters of magnetron sputtering, the effects of different deposition methods were revealed by the properties of ITO films deposited by DC and RF magnetron sputtering. The essential differences between the DC and RF magnetron sputtering were concluded in this article.
机构地区 烟台大学物理系
出处 《真空》 CAS 北大核心 1999年第2期15-17,共3页 Vacuum
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同被引文献23

  • 1吴金,魏同立,郑茳,肖志雄.低温载流子冻析效应及其对半导体器件电性能的影响[J].固体电子学研究与进展,1994,14(3):228-235. 被引量:4
  • 2胡炳森,王剑峰,马春华,顾子平.液晶显示器用ITO透明导电膜技术现状[J].真空科学与技术,1995,15(2):135-139. 被引量:9
  • 3姜燮昌 王益劳 等.建筑玻璃真空镀膜译文集[M].沈阳:真空杂志社,1995..
  • 4姜燮昌.ITO膜的溅射沉积技术[M].沈阳:真空杂志社,1998..
  • 5Biai I, Quintela M, Mendes L, et al. Performances ex- hibited by large area ITO layers produced by R.F. mag- netron sputtering[J]. Thin solid Films, 1999, 337:171 - 175.
  • 6Noda Kazuhiro, Sato Hirotoshi, Itaty Hisao, et al. Characterization of Sn-doped In2Oa film on roll to>roll flexible plastic substrate prepared by IX; magnetron sput tering[J]. Jpn. J. Appl. Phys. , 2003,42 : 217 - 222.
  • 7Toshro M, Kunihiro F. Indium tin oxide thin film pre-pared by chemical vapor deposition [J]. Thin Solid Films, 1991,203(2) :297 - 302.
  • 8Christian K D J, Shatynski S R. Thin film passive solar windows produced by reactive evaporation of In-Sn[J]. Thin Solid Films, 1983,108 : 319 - 324.
  • 9Noguchi S, Sakata H. Electrical properties of undoped In2O3 films prepared by reactive evaporation [J]. Phys. D: Appl. Phys. , 1980,13:1129 - 1133.
  • 10Yao J L, Hao S, Wilkinson J S. Indium tin oxide films by sequential evaporation[J]. Thin Solid Films, 1990, 189 : 227 - 233.

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